All Transistors. Datasheet

 

View ksc2316 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

ksc2316

KSC2316 NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS • Driver Stage Amplifier TO-92L • Complement to KSA916 ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Collector Dissipation PC 900 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Symbol Test Conditions Min Typ Max Unit V Collector-Base Breakdown Voltage BVCBO IC=1mA, IE=0 120 V Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0 120 V Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 Collector Cut-off Current ICBO VCB=120V, IE=0 0.1 DC C

Keywords

 ksc2316 Datasheet, Design, MOSFET, Power

 ksc2316 RoHS, Compliant, Service, Triacs, Semiconductor

 ksc2316 Database, Innovation, IC, Electricity

 

 
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