View ksc3503 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
KSC3503 CRT Display, Video Output • High Voltage : VCEO=300V • Low Reverse Transfer Capacitance : Cre=1.8pF @ VCB=30V TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 100 mA ICP Collector Current (Pulse) 200 mA PC Collector Dissipation (TC=25°C) 7 W PC Collector Dissipation (TA=25°C) 1.2 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 300 V
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ksc3503 Datasheet, Design, MOSFET, Power
ksc3503 RoHS, Compliant, Service, Triacs, Semiconductor
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