View kse340 datasheet:

KSE340 NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITTER TO-126 SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complement to KSE350 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter- Base Voltage VEBO 5 V Collector Current IC 500 mA Collector Dissipation (Tc=25 ) PC 20 W Junction Temperature TJ 150 1. Emitter 2. Collector 3. Base Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Condition Min Max Unit Collector Emitter Sustaining Voltage VCEO(sus) IC = 1mA, IB = 0 300 V Collector Cutoff Current ICBO VCB = 300V, IE =0 100 uA Emitter Cutoff Current IEBO VBE = 3V, IC = 0 100 uA