View kst5086 datasheet:

KST5086/5087 PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Cllector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -3 V Collector Current IC -50 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Max Unit Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 -50 V Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 V -50 ICBO VCB= -20V, IE=0 Collector Cut-off Current -50 nA hFE DC Current Gain VCE= -5V, IC= -100 :KST5086 150 500 :KST5087 250 800 VCE= -5V, IC= -1mA :KST5086 150 :KST5087 250 VCE= -5V, IC= -10