View lte42005s 2 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor 1997 Feb 21 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent PIN DESCRIPTION current sharing and withstanding a high VSWR 1 collector • Gold metallization realizes very stable characteristics 2 base and excellent lifetime 3 emitter connected to flange • Input matching cell improves input impedance and allows an easier design of circuits APPLICATION 1 columns • Common emitter class-A linear power amplifiers up c to 4.2 GHz. b DESCRIPTION 3 e NPN silicon planar epitaxial microwave power transistor in MAM131 2 a SO
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lte42005s 2 Datasheet, Design, MOSFET, Power
lte42005s 2 RoHS, Compliant, Service, Triacs, Semiconductor
lte42005s 2 Database, Innovation, IC, Electricity
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