View lte42008r 2 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor 1997 Feb 24 Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Semiconductors Product specification NPN microwave power transistor LTE42008R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent PIN DESCRIPTION current sharing and withstanding a high VSWR 1 collector • Gold metallization realizes very stable characteristics 2 base and excellent lifetime 3 emitter connected to flange • Input matching cell improves input impedance and allows an easier design of circuits. APPLICATION 1 olumns • Common emitter class-A linear power amplifiers up c to 4.2 GHz. b DESCRIPTION 3 e NPN silicon planar epitaxial micr
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lte42008r 2 Datasheet, Design, MOSFET, Power
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