View lte42012r 2 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor 1997 Feb 21 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT440A • Interdigitated structure provides high emitter efficiency PIN DESCRIPTION • Diffused emitter ballasting resistor provides excellent 1 collector current sharing and withstanding a high VSWR 2 base • Gold metallization realizes very stable characteristics 3 emitter connected to flange and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input matching cell improves input impedance and 1 olumns allows an easier design of wideband circuits. c APPLICATIONS b •
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lte42012r 2 Datasheet, Design, MOSFET, Power
lte42012r 2 RoHS, Compliant, Service, Triacs, Semiconductor
lte42012r 2 Database, Innovation, IC, Electricity
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