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lwe2015r_2

DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Semiconductors Product specification NPN microwave power transistor LWE2015R FEATURES PINNING - SOT446A • Interdigitated structure provides high emitter efficiency PIN DESCRIPTION • Diffused emitter ballasting resistor provides excellent 1 collector current sharing and withstanding a high VSWR 2 base • Gold metallization realizes very stable characteristics 3 emitter and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage 1 APPLICATIONS c • Common emitter class-A amplifiers up to 2.3 GHz in CW conditio

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