View mbrd1035ctlrev0 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBRD1035CTL/D Advance Information MBRD1035CTL SWITCHMODE? Schottky Power Rectifier DPAK Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER . . . employing the Schottky Barrier principle in a large area metal–to–silicon 10 AMPERES power diode. State of the art geometry features epitaxial construction with oxide 35 VOLTS passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. 4 • Highly Stable Oxide Passivated Junction • Guardring for Stress Protection 1 • Matched dual die construction – May be Paralleled for High Current Output 3 • High dv/dt Capability CASE 369A–13 • Short Heat Sink Tap Manufa
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mbrd1035ctlrev0 Datasheet, Design, MOSFET, Power
mbrd1035ctlrev0 RoHS, Compliant, Service, Triacs, Semiconductor
mbrd1035ctlrev0 Database, Innovation, IC, Electricity
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