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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20030CTL/D Designer's? Data Sheet MBRP20030CTL SWITCHMODE? Schottky Power Rectifier SCHOTTKY BARRIER POWERTAP? II Package RECTIFIER 200 AMPERES . . . employing the Schottky Barrier principle in a large area metal–to–silicon 30 VOLTS power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. • Highly Stable Oxide Passivated Junction • Guardring for Stress Protection • Matched dual die construction – May be Paralleled for High Current Output 1 • High dv/dt Capability 2 3 • Very Low Forward Voltage Drop CASE 357C-03 Me