View mbrp20030ctlrev2dx datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20030CTL/D Product Preview MBRP20030CTL POWERTAP? II Motorola Preferred Device SWITCHMODE? Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following LOW VF features: SCHOTTKY BARRIER • Dual Diode Construction — May Be Paralleled for Higher Current Output RECTIFIER • Guardring for Stress Protection 200 AMPERES • Low Forward Voltage Drop 30 VOLTS • 150°C Operating Junction Temperature • Recyclable Epoxy • Guaranteed Reverse Avalanche Energy Capability 2 • Improved Mechanical Ratings 1 1 Mechanical Characteristics 3 • Case: Epoxy, Molded with metal heatsink base 2 • Weight: 80 grams (approximately)
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mbrp20030ctlrev2dx Datasheet, Design, MOSFET, Power
mbrp20030ctlrev2dx RoHS, Compliant, Service, Triacs, Semiconductor
mbrp20030ctlrev2dx Database, Innovation, IC, Electricity
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