View mbrp20035lrev0 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20035L/D Product Preview SWITCHMODE? MBRP20035L Schottky Power Rectifier POWERTAP III Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power SCHOTTKY BARRIER diode. State of the art geometry features epitaxial construction with oxide passivation RECTIFIER and metal overlay contact. Ideally suited for low voltage, high frequency switching 200 AMPERES power supplies, free wheeling diode and polarity protection diodes. 35 VOLTS • Very Low Forward Voltage Drop • Highly Stable Oxide Passivated Junction • Guardring for Stress Protection 1 • High dv/dt Capability Mechanical Characteristics: • Dual Die Construction 1 • Case: Epoxy, Molded with Plated Copper Heatsink Base
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mbrp20035lrev0 Datasheet, Design, MOSFET, Power
mbrp20035lrev0 RoHS, Compliant, Service, Triacs, Semiconductor
mbrp20035lrev0 Database, Innovation, IC, Electricity
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