View mbrp20045ctrev2dx datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20045CT/D Preliminary Data Sheet MBRP20045CT POWERTAP II MBRP20060CT SWITCHMODE? Power Rectifiers Motorola Preferred Devices . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: SCHOTTKY BARRIER • Dual Diode Construction — May Be Paralleled for Higher Current Output RECTIFIERS • Guardring for Stress Protection 200 AMPERES • Low Forward Voltage 45 to 60 VOLTS • 175°C Operating Junction Temperature • Guaranteed Reverse Avalanche Mechanical Characteristics: 2 • Case: Epoxy, Molded with metal heatsink base • Weight: 80 grams (approximately) 1 • Finish: All External Surfaces Corrosion Resistant • Top Terminal Torque: 25–40 l
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mbrp20045ctrev2dx Datasheet, Design, MOSFET, Power
mbrp20045ctrev2dx RoHS, Compliant, Service, Triacs, Semiconductor
mbrp20045ctrev2dx Database, Innovation, IC, Electricity
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