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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

mjd112

MJD112 MJD117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 ELECTRICAL SIMILAR TO TIP112 AND 1 TIP117 APPLICATIONS GENERAL PURPOSE SWITCHING AND DPAK AMPLIFIER TO-252 (Suffix ”T4”) DESCRIPTION The MJD112 and MJD117 form complementary PNP - NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. INTERNAL SCHEMATIC DIAGRAM R1(typ) = 7K? R2(typ) = 200? ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (I = 0) 100 V CBO E VCEO Collector-Emitter Voltage (IB = 0) 100 V VEBO Emitter-Base Voltage (IC

Keywords

 mjd112 Datasheet, Design, MOSFET, Power

 mjd112 RoHS, Compliant, Service, Triacs, Semiconductor

 mjd112 Database, Innovation, IC, Electricity

 

 
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