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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

mjd112re

Order this document MOTOROLA by MJD112/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD112 Complementary Darlington PNP MJD117* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose power and switching such as output or driver stages SILICON in applications such as switching regulators, converters, and power amplifiers. POWER TRANSISTORS • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 2 AMPERES • Straight Lead Version in Plastic Sleeves (“1” Suffix) 100 VOLTS • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) 20 WATTS • Surface Mount Replacements for TIP110–TIP117 Series • Monolithic Construction With Built–in Base–Emitter Shunt Resistors IIIIIIIIIIIIIIIIIIIIIII • High DC Current G

Keywords

 mjd112re Datasheet, Design, MOSFET, Power

 mjd112re RoHS, Compliant, Service, Triacs, Semiconductor

 mjd112re Database, Innovation, IC, Electricity

 

 
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