View mjd122 datasheet:

MJD122 MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 ELECTRICAL SIMILAR TO TIP122 AND TIP127 1 APPLICATIONS GENERAL PURPOSE SWITCHING AND DPAK AMPLIFIER. TO-252 (Suffix ”T4”) DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. INTERNAL SCHEMATIC DIAGRAM R Typ. = 10 K? R Typ. = 150 ? 1 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJD122 PNP MJD127 V Collector-Base Voltage (I = 0) 100 V CBO E VCEO Collector-Emitter Voltage (IB = 0) 100 V V