View mjd122re datasheet:

Order this document MOTOROLA by MJD122/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD122 Complementary Darlington PNP MJD127* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS • Straight Lead Version in Plastic Sleeves (“–1” Suffix) 8 AMPERES • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) 100 VOLTS • Surface Mount Replacements for 2N6040–2N6045 Series, TIP120–TIP122 20 WATTS Series, and TIP125–TIP127 Series • Monolithic Construction With Built–in Base–Emitter Shunt Resistors • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc IIIIIIIIIII