View mjh11017 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Order this document MOTOROLA by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington PNP Silicon Power Transistors * MJH11017 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage MJH11021 * VCEO(sus) = 150 Vdc (Min) — MJH11018, 17 NPN VCEO(sus) = 200 Vdc (Min) — MJH11020, 19 VCEO(sus) = 250 Vdc (Min) — MJH11022, 21 MJH11018* • Low Collector–Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A IIIIIIIIIIIIIIIIIIIIIII MJH11020* VCE(sat) = 1.8 V (Typ) @ IC = 10 A • Monolithic Construction IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIII IIII III * MJH11022 I
Keywords
mjh11017 Datasheet, Design, MOSFET, Power
mjh11017 RoHS, Compliant, Service, Triacs, Semiconductor
mjh11017 Database, Innovation, IC, Electricity
