View mmbd914lt1rev0dx datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBD914LT1/D High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 1 CATHODE ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318–08, STYLE 8 SOT–23 (TO–236AB) Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING MMBD914L