View mmbf4391lt1rev0dxx datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF4391LT1/D MMBF4391LT1 JFET Switching Transistors MMBF4392LT1 N–Channel 2 SOURCE MMBF4393LT1 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc CASE 318–08, STYLE 10 Drain–Gate Voltage VDG 30 Vdc SOT–23 (TO–236AB) Gate–Source Voltage VGS 30 Vdc Forward Gate Current IG(f) 50 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING MMBF4391LT1 = 6J; MMBF4392LT1 = 6K; MMBF4393LT1 = 6G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise note