View mmbf4416lt1rev0d datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF4416LT1/D JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CASE 318–08, STYLE 10 Drain–Source Voltage VDS 30 Vdc SOT–23 (TO–236AB) Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Gate Current IG 10 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING MMBF4416LT1 = M6A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Uni