View mmbf5484lt1rev0d datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF5484LT1/D JFET Transistor N–Channel MMBF5484LT1 2 SOURCE Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Drain–Gate Voltage VDG 25 Vdc Reverse Gate–Source Voltage VGS(r) 25 Vdc CASE 318–08, STYLE 10 Forward Gate Current IG(f) 10 mAdc SOT–23 (TO–236AB) Continuous Device Dissipation at or Below PD TC = 25°C 200 mW Linear Derating Factor 2.8 mW/°C Storage Channel Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE M