View mmbr4957 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR4957LT1/D The RF Line PNP Silicon MMBR4957LT1, T3 High-Frequency Transistor . . . designed for high–gain, low–noise amplifier oscillator and mixer applica- tions. Specifically packaged for thick and thin–film circuits using surface mount components. • High Gain — Gpe = 17 dB Typ @ f = 450 MHz IC = –30 mA • Low Noise — NF = 3.0 dB Typ @ f = 450 MHz HIGH–FREQUENCY • Available in tape and reel packaging options by adding suffix: TRANSISTOR PNP SILICON T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –30 Vdc Collector–Base Voltage VCBO –30 Vdc Emitter–Base Voltage VEBO –3.0 Vdc Collector Current — Continuous IC –30 mA