View mmbr5031 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR5031LT1/D The RF Line NPN Silicon MMBR5031LT1 High-Frequency Transistor Designed for thick and thin–film circuits using surface mount components and requiring low–noise, high–gain signal amplification at frequencies to 1.0 GHz. • High Gain — Gpe = 17 dB Typ @ f = 450 MHz • Low Noise — NF = 2.5 dB Typ @ f = 450 MHz RF AMPLIFIER TRANSISTOR • Available in tape and reel packaging options: NPN SILICON T1 suffix = 3,000 units per reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 10 Vdc Collector–Base Voltage VCBO 15 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 20 mAdc Maximum Junction Temperature TJmax 150 °C Power Dissipation, Tcase = 75°C (1) PD(max) 0.