View mmbt6517 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6517LT1/D High Voltage Transistor MMBT6517LT1 NPN Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 350 Vdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Collector–Base Voltage VCBO 350 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc Collector Current — Continuous IC 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to A