View mmbt6520 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6520LT1/D High Voltage Transistor MMBT6520LT1 PNP Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Collector–Emitter Voltage VCEO –350 Vdc Collector–Base Voltage VCBO –350 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Base Current IB –250 mA Collector Current — Continuous IC –500 mAdc DEVICE MARKING MMBT6520LT1 = 2Z THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R?JA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate, (2) TA = 25°C Derate above 25°C 2.4 m