View mmbta13 utc datasheet:

UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a darlington transistor. FEATURES 1 *Collector-Emitter Voltage: Vces = 30V *Collector Dissipation : Pc ( mas ) = 625 mW SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 10 V Collector Dissipation(Tc=25°C) Pc 625 mW Collector Current Ic 500 mA Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT Collector-Emitter Breakdown Voltage BVCEO Ic=100µA,IB=0 3