View mmbta55l datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA55LT1/D Driver Transistors MMBTA55LT1 COLLECTOR PNP Silicon 3 MMBTA56LT1* *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol MMBTA55 MMBTA56 Unit 1 Collector–Emitter Voltage VCEO –60 –80 Vdc 2 Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage VEBO –4.0 Vdc CASE 318–08, STYLE 6 Collector Current — Continuous IC –500 mAdc SOT–23 (TO–236AB) DEVICE MARKING MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board,(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate ab