View mmbta63l datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA63LT1/D Darlington Transistors MMBTA63LT1 PNP Silicon COLLECTOR 3 MMBTA64LT1 * *Motorola Preferred Device BASE 1 EMITTER 2 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector–Emitter Voltage VCES –30 Vdc Collector–Base Voltage VCBO –30 Vdc CASE 318–08, STYLE 6 Emitter–Base Voltage VEBO –10 Vdc SOT–23 (TO–236AB) Collector Current — Continuous IC –500 mAdc DEVICE MARKING MMBTA63LT1 = 2U; MMBTA64LT1 = 2V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board,(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/