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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA70LT1/D General Purpose Transistor MMBTA70LT1 COLLECTOR PNP Silicon 3 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector–Emitter Voltage VCEO –40 Vdc Emitter–Base Voltage VEBO –4.0 Vdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Collector Current — Continuous IC –100 mAdc DEVICE MARKING MMBTA70LT1 = M2C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R?JA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R?JA 417 °C/W Junction and Storage Temperatur