View mmdf1n05erev5 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF1N05E/D Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS? devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface DUAL TMOS MOSFET mount MOSFETs feature ultra low RDS(on) and true logic level 50 VOLTS performance. They are capable of withstanding high energy in the 1.5 AMPERE avalanche and commutation modes and the drain–to–source diode RDS(on) = 0.30 OHM ? has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc D converters, and power management in portable and battery
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