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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2406T1/D MMFT2406T1 Medium Power Field Effect Motorola Preferred Device Transistor N�Channel Enhancement Mode MEDIUM POWER Silicon Gate TMOS E�FET? TMOS FET SOT�223 for Surface Mount 700 mA 240 VOLTS This TMOS medium power field effect transistor is designed for RDS(on) = 6.0 OHM high speed, low loss power switching

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050