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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

mpsa13re

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA13/D Darlington Transistors MPSA13 NPN Silicon MPSA14* *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 3 MAXIMUM RATINGS CASE 29�04, STYLE 1 TO�92 (TO�226AA) Rating Symbol Value Unit Collector�Emitter Voltage VCES 30 Vdc Collector�Base Voltage VCBO 30 Vdc Emitter�Base Voltage VEBO 10 Vdc Collector Current � Continuous IC 500 mAdc Total Device Dissipation @ TA = 25�C PD 625 mW Derate above 25�C 5.0 mW/�C Total Device Dissipation @ TC = 25�C PD 1.5 Watts Derate above 25�C 12 mW/�C Operating and Storage Junction TJ, Tstg �55 to +150 �C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 �C/W Thermal Resistance, Junc

Keywords

 mpsa13re Datasheet, Design, MOSFET, Power

 mpsa13re RoHS, Compliant, Service, Triacs, Semiconductor

 mpsa13re Database, Innovation, IC, Electricity

 

 
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