View mpsa13re datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA13/D Darlington Transistors MPSA13 NPN Silicon MPSA14* *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junc