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mpsa18re

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA18/D Low Noise Transistor NPN Silicon MPSA18 Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29�04, STYLE 1 Rating Symbol Value Unit TO�92 (TO�226AA) Collector�Emitter Voltage VCEO 45 Vdc Collector�Base Voltage VCBO 45 Vdc Emitter�Base Voltage VEBO 6.5 Vdc Collector Current � Continuous IC 200 mAdc Total Device Dissipation @ TA = 25�C PD 625 mW Derate above 25�C 5.0 mW/�C Total Device Dissipation @ TC = 25�C PD 1.5 Watts Derate above 25�C 12 mW/�C Operating and Storage Junction TJ, Tstg �55 to +150 �C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 �C/W Thermal Resistance, Junction t

Keywords

 mpsa18re Datasheet, Design, MOSFET, Power

 mpsa18re RoHS, Compliant, Service, Triacs, Semiconductor

 mpsa18re Database, Innovation, IC, Electricity

 

 
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