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View mpsa75re datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

mpsa75re

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA75/D Darlington Transistors PNP Silicon MPSA75 MPSA77 COLLECTOR 3 BASE 2 EMITTER 1 1 MAXIMUM RATINGS 2 3 Rating Symbol MPSA75 MPSA77 Unit CASE 29–04, STYLE 1 Collector–Emitter Voltage VCES –40 –60 Vdc TO–92 (TO–226AA) Emitter–Base Voltage VEBO –10 Vdc Collector Current — Continuous IC –500 Adc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Vo

Keywords

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 mpsa75re Database, Innovation, IC, Electricity

 

 
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