View mrf15060rev0 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub–Micron Bipolar Line MRF15060 RF Power Bipolar Transistors MRF15060S Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and 60 W, 1.49 GHz class AB amplifier applications in 26 volt amplitude modulated and multi–carrier RF POWER base station equipment. BIPOLAR • Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts TRANSISTORS Output Power — 60 Watts (PEP) Power Gain — 10 dB Efficiency — 33% • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellen
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mrf15060rev0 Datasheet, Design, MOSFET, Power
mrf15060rev0 RoHS, Compliant, Service, Triacs, Semiconductor
mrf15060rev0 Database, Innovation, IC, Electricity
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