View mrf160re datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET MRF160 Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB 4.0 W, to 400 MHz Efficiency = 50% MOSFET BROADBAND • Excellent Thermal Stability, Ideally Suited for Class A Operation RF POWER FET • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Low Crss – 0.8 pF Typical at VDS = 28 Volts CASE 249–06, STYLE 3 D G S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–Gate Voltage VDSS 65 Vdc Drain–