View mrf557rev7 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF557/D The RF Line NPN Silicon MRF557 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W 1.5 W, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR • Cost Effective PowerMacro Package NPN SILICON • Electroless Tin Plated Leads for Improved Solderability • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 16 Vdc Collector–Base Voltage VCBO 36 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 400 mAdc Tota