View mrf5811lt1rev1 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5811LT1/D The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor Designed for high current, low power amplifiers up to 1.0 GHz. IC = 200 mA • Low Noise (2.0 dB @ 500 MHz) LOW NOISE HIGH–FREQUENCY • Low Intermodulation Distortion TRANSISTOR • High Gain NPN SILICON • State–of–the–Art Technology Fine Line Geometry Arsenic Emitters Gold Top Metallization Nichrome Thin–Film Ballasting Resistors • Excellent Dynamic Range • Fully Characterized • High Current–Gain Bandwidth Product • Available in Tape and Reel by Adding T1 Suffix to Part Number. T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel. CASE 318A–05, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 18 Vdc Collecto