View mrf8372rev0 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR • State–of–the–Art Technology NPN SILICON Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Implanted Arsenic Emitters • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. • Order MRF8372 in tape and reel packaging by adding suffix: CASE 751–05, STYLE 1 R1 suffix = 500 units per reel SORF (SO–8) R2 suffix = 2,50