View mrf9331l datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF9331LT1/D The RF Line NPN Silicon MRF9331LT1 High-Frequency Transistor Designed primarily for use in low power amplifiers to 1.0 GHz. Ideal for pagers and other battery operated systems where low power consumption is critical. • Low Power Consumption Characterized for IE = 0.1 to 1.0 mA IC = 1.0 mA SURFACE MOUNTED • High Current–Gain — Bandwidth Product — HIGH–FREQUENCY fT = 5.0 GHz (Typ) @ IC = 1.0 mAdc TRANSISTOR • Low Noise Figure and High Power Gain @ f = 1.0 GHz — NPN SILICON NF(matched) = 2.5 dB (Typ) GNF(matched) = 12.5 dB (Typ) • Guaranteed RF Parameters • Surface Mounted SOT–143 Offers Improved RF Performance Lower Package Parasitics High Gain • Available in tape and reel packaging: T1 suff