View mrf9811t1rev0d1 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF9811T1/D Advance Information MRF9811T1 The RF Small Signal Line Gallium Arsenide N–Channel Depletion–Mode MESFET Designed for use in driver stages of moderate power RF amplifiers to 2 GHz. 21 dBm, 5.8 V Typical applications are cellular radios and personal communication HIGH FREQUENCY transmitters such as AMPS, ETACS, NMT, GSM, PCN, JDC and DECT. GaAs FET TRANSISTOR • Performance Specifications at 900 MHz, 5.8 V: Output Power = 21 dBm Power Gain = 14 dB Min Drain Efficiency = 55% Min • Plastic Surface Mount Package • Order MRF9811T1 for Tape and Reel Packaging. T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel. CASE 318A–05, STYLE 7 (SOT–143) MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage V