View mrf9822t1rev0 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF9822T1/D Advance Information MRF9822T1 The RF Small Signal Line Gallium Arsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz Designed for use in low voltage, moderate power amplifiers such as portable HIGH FREQUENCY analog and digital cellular radios and PC RF modems. POWER TRANSISTOR • Performance Specifications at 3.5 V, 850 MHz: GaAs PHEMT Output Power = 31 dBm Min Power Gain = 11 dB Typ Efficiency = 70% Min • Guaranteed Ruggedness at Load VSWR = 20:1 • New Plastic Surface Mount Package • Available in Tape and Reel Packaging Options: T1 suffix = 1,000 Units per Reel • Device Marking = 9822 CASE 449–02, STYLE 1 (PLD–1) MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate V