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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB1N100E/D Designer's? Data Sheet MTB1N100E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N–Channel Enhancement–Mode Silicon Gate 1.0 AMPERES 1000 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9.0 OHM than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide ? enhanced voltage–blocking capability without degrading perfor- mance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche an