View mtb75n03hdlrev2x datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N03HDL/D Advanced Information MTB75N03HDL HDTMOS E-FET.? Motorola Preferred Device High Density Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL N–Channel Enhancement–Mode Silicon Gate 75 AMPERES 25 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9 mOHM than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–cell density HDTMOS power FET is designed to withstand ? high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed