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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N06HD/D Designer's? Data Sheet MTB75N06HD HDTMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N–Channel Enhancement–Mode Silicon Gate 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 10 mOHM than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–cell density HDTMOS power FET is designed to withstand ? high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low vol