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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD5P06E/D Designer's? Data Sheet MTD5P06E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET P�Channel Enhancement�Mode Silicon Gate 5.0 AMPERES 60 VOLTS This advanced TMOS E�FET is designed to withstand high RDS(on) = 0.55 OHM energy in the avalanche and commutatio

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050