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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTV25N50E/D Advance Information MTV25N50E TMOS E-FET.? Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET N–Channel Enhancement–Mode Silicon Gate 25 AMPERES 500 VOLTS The D3PAK package has the capability of housing the largest chip RDS(on) = 0.200 OHM size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading ? performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and com