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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Switching Diodes 2SK963 MA2S111 (Tentative) Silicon epitaxial planer type 1.60± 0.05 Unit : mm For switching circuits +0.05 (0.2) 1.20–0.03 Features Small S-Mini type 2-pin package 12 High-density mounting possible Short reverse recovery period trr Small capacity between pins, Ct Long Lead Absolute Maximum Ratings (Ta= 25?C) 0.4 min. 1.2± 0.05 0.4 min. Parameter Symbol Rating Unit 2.1± 0.08 Reverse voltage (DC) VR 80 V 1 : Anode Peak reverse voltage VRM 80 V 2 : Cathode Average forward current IF (AV) 100 mA S-Mini Type Package (2-pin) Peak forward current IFM 225 mA Marking Symbol : A Non-repetitive peak forward surge current IFSM * 500 mA Junction temperature Tj 150 ?C Storage temperature Tstg – 55 to +150 ?C * t=1s Electrical Characteristics (Ta= 25?
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ma2s111 Datasheet, Design, MOSFET, Power
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