View ma2s331 datasheet:

Variable Capacitance Diodes MA111 MA2S331 Silicon epitaxial planer type Unit : mm For UHF wireless equipment VCO 0.15 min. 0.15 min. Features Low series resistance rD= 0.18? (typ.) Good linearity of C – V curve SS-Mini package, optimum for down-sizing of equipment 1.3± 0.1 1.7± 0.1 Absolute Maximum Ratings (Ta= 25?C) Parameter Symbol Rating Unit 1 : Anode Reverse voltage (DC) VR 12 V 2 : Cathode SS-Mini Type Package (2-pin) Forward current (DC) IF 20 mA Marking Symbol : F Junction temperature Tj 150 ?C Storage temperature Tstg – 55 to + 150 ?C Electrical Characteristics (Ta= 25?C) Parameter Symbol Condition min typ max Unit Reverse current (DC) IR VR= 12V 10 nA CD(1V) VR= 1V, f= 1MHz 17.0 20.0 pF CD(2V) VR= 2V, f= 1MHz 14.0 15.0 16.0 pF Diode capacitance C